METHOD OF MONOSILANE PRODUCTION AND DEVICE TO THIS END Russian patent published in 2011 - IPC C01B33/04 

FIELD: process engineering.

SUBSTANCE: invention may be used in production of semiconductors, microelectronics and solar power engineering. Proposed method comprises interaction of calcium hydride with gaseous silicon tetra fluoride in eutectic melt of lithium and potassium chlorides at 360-390°C and purification of monosilane on granulated sodium fluoride, zeolite and carbon. Proposed device comprises thermal reactor 19 with melt 12 of potassium and lithium chlorides, appliances for feeding gaseous silicon tetra fluoride into melt 1 and withdrawing monosilane from reaction zone 11. To maintain concentration of calcium chloride in melt 12 at saturation level, tight thermal tank 18 with calcium hydride is arranged above reactor 19. Said tank is provided with branch pipe that terminates in reticulate vessel 13. Boundary between said vessel and branch pipe is located below melt level 12 in reactor 19. To maintain the level of melt 12 in reactor 19, tight thermal tank 17 with melt is arranged above the reactor. Said tank is furnished with branch pipe with its lower end lowered in tank 18 to preset level. To discharge calcium fluoride, reactor bottom is provided with settling device 20 that incorporates two valves or gates interconnected so that on opening top valve, bottom valve is closed, and visa versa.

EFFECT: efficient process.

5 cl, 2 dwg