INTEGRATED BIPOLAR MAGNETOTRANSISTOR Russian patent published in 2003 - IPC

FIELD: measurement technology, integrated electronics. SUBSTANCE: invention refers to integrated elements measuring direction and value of magnetic fields and magnetic fluxes, in particular. Integrated bipolar magnetotransistor incorporates semiconductor substrate of first type of conductance with four hidden semiconductor regions of four collectors of second type of conductance, slightly doped semiconductor region of collector of second type of conductance, semiconductor region of first type of conductance, semiconductor region of base of first type of conductance, semiconductor region of emitter of second type of conductance, metal bus of zero potential connected to semiconductor region of emitter, two metal input buses connected to semiconductor region of base, four metal output buses connected to four hidden semiconductor regions of four collectors. EFFECT: enhanced functional potential of integrated bipolar magnetotransistor. 2 dwg