BIPOLAR TRANSISTOR Russian patent published in 1997 - IPC

FIELD: microelectronics; grand-scale integrated circuits. SUBSTANCE: bipolar transistor formed in insulated semiconductor mesa structure has highly dopes emitter, collector, and base regions with insulated regions of doped polycrystalline silicon. One of these regions is located in emitter region and embedded in base region through depth of half the thickness of base region, and other insulated region is in emitter region and is embedded in highly doped collector region through maximum half the thickness of collector region. Distance between doped polycrystalline silicon regions equals thickness of insulating layer. Base and collector regions are connected to respective conductors through doped polycrystalline silicon regions. EFFECT: improved design. 2 cl, 2 dwg