METHOD FOR MAKING SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2013 - IPC H01L21/762 

FIELD: electricity.

SUBSTANCE: method for making silicon-on-insulator structure involves implantation to amorphous insulating SiO₂ layer of a silicon substrate of ions of easily diffusing mixture removing irregular connections and saturating failed connections in SiO₂ layer and/or at the boundary between SiO₂ layer and surface layer of silicon - F⁺. A localisation area of implanted impurity is formed under conditions providing concentration of implemented impurity of not less than 0.05 at % and not more than 1 at %, which is sufficient for elimination of negative occurrences of irregular and failed connections, at doses of not less than 3×10¹⁴ cm^-2 and less than 5×10¹⁵ cm^-2. A silicon donor substrate is connected to SiO₂ layer of the substrate and splicing is performed with formation of a surface silicon layer of the required thickness on SiO₂, thus making silicon-on-insulator structure. Finally, annealing is performed under conditions providing diffusion of introduced impurity with removal of irregular connections and saturation of failed connections in SiO₂ and/or at the boundary between SiO₂ layer and SiO surface layer, at the temperatures of 700-1100°C, with duration of more than 0.5 hour, in inert atmosphere.

EFFECT: improving quality of the structure, enlarging application field of the method for creation of devices with increased stability to action of ionising emission.

12 cl, 2 dwg