SILICON NANOSTRUCTURE PRODUCTION PROCESS Russian patent published in 2000 - IPC

FIELD: structures for data transmission, conversion, storage, and generation. SUBSTANCE: process includes physical and chemical procedures acting on silicon-containing material followed by settling of silicon due to mentioned action in nanocavities of porous silicate matrix. Novelty is that matrix proper is exposed to electron flow at energy of 5-25 keV and density of 1-10² mA/sq.mm for at least 50 s. Opal matrix may be used for the purpose. Electron flow may be obtained by scanning electron beam over substrate surface at low pressure, say, 10^-5-10^-6 mm Hg. EFFECT: provision for shaping local silicon areas of different thickness and configuration. 5 cl, 1 tbl