SILICON STRUCTURE MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: silicon structures for heavy-current electronic and microelectronic devices. SUBSTANCE: in manufacturing silicon structures incorporating p layer of silicon above and below interface, plate surface is ground, grooves are made on this surface their depth being at least 0.3 mcm and distance between boundaries, 20 to 1000 mcm, plates are subjected to hydrophilization treatment, held in hydrofluoric acid solution in deionized water, their ground surfaces are joined together in aqueous solution of diffusants of group III elements in 0.1 to 3.0 concentration, dried out in the open at 100 to 130 C for at least four hours at the same time applying pressure of at least 3×10^-3 Pa, heated at a rate of maximum 10 C/min starting from 200 and up to 1000 C, and held at this temperature. EFFECT: improved electrophysical characteristics of structures due to uniform flaw-free jointing of plates throughout entire surface. 1 tbl