METHOD OF CREATING STRUCTURE - SILICON ON INSULATOR Russian patent published in 2019 - IPC H01L21/762 

FIELD: instrument engineering.

SUBSTANCE: invention relates to instrument making and can be used in making silicon sensitive elements of micromechanical sensors, such as pressure sensors, accelerometers, angular velocity sensors. Invention objective is improvement of metrological characteristics of micromechanical sensors, namely reduction of measurement error due to reduction of thermomechanical stresses occurring in zones of connected parts. In the method of creating a structure – silicon on an insulator, which includes formation on the first silicon plate of a dielectric layer, its connection to the second silicon plate, splicing of the connected plates by heating, thinning one of the plates, according to the method, thinning one of the silicon plates is carried out before connecting the plates locally in accordance with the topology of the formed structures, after which a low-melting dielectric layer is formed on the plates by magnetron sputtering, and jointing of joined plates is carried out at melting point of low-melting dielectric layer.

EFFECT: reduction of measurement error due to reduction of thermomechanical stresses in zones of plates connection.

1 cl, 3 dwg