FIELD: semiconductors. SUBSTANCE: electric field which shape corresponds to electric characteristics of micro particles is generated using planar p-n junctions, which are located in mouth of through channel, which is generated in semiconductor plate, and flat p-n junctions which appear on inner surface of channel. When reverse bias is applied, areas of high intensity of magnetic field are generated in channel. Travel time for passing channel differs for particles depending on characteristics of field and particles. EFFECT: increased precision of identification. 4 cl, 5 dwg
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