UHF FIELD-EFFECT TRANSISTOR WITH A SCHOTTKY BARRIER Russian patent published in 2022 - IPC H01L29/812 

FIELD: electronics.

SUBSTANCE: invention relates to electronic equipment and can be used as active elements of UHF apparatus. UHF field-effect transistor with a Schottky barrier comprises a semi-insulating gallium arsenide substrate with an active layer and a contact layer; a comb of alternating single source-gate-drain electrodes, wherein regions of semi-insulating gallium arsenide with a width of at least 4.0 mcm are located between the source-drain electrodes; channels with grooves are located in the pairs of source-drain electrodes; in said grooves, the gate electrodes are located, wherein a dielectric layer of a material with low permittivity is located asymmetrically in the direction of the source electrodes, in the channel of each pair of the source-drain electrodes, on the side of the source electrode; each of the gate electrodes, relative to the lateral surface thereof on the side of the drain electrode, is made in height with a different cross-section size in the direction of the source electrode, wherein the lower part is made with a lower size and the upper part with a greater size; like source-gate-drain electrodes are electrically connected, wherein the groove of the channel is made with a depth of no more than 0.3 mcm; the dielectric layer in the channel of each pair of the source-drain electrodes is made on the side of the drain electrode as well, wherein both dielectric layers are made of the same material with a relative permittivity of less than 8,0, with the same thickness of 0.1 to 0.25 mcm; the distance between both said dielectric layers corresponds to the width of the groove of the channel and is equal to 0.3–1.0 mcm; the lower part of the gate electrode is made in length with a cross-section size of 0.03 to 0.5 mcm, and in equal to the sum of the depth of the channel groove and the thickness of the dielectric layer, and is located directly on the top surface of the channel groove, the side surface thereof on the side of the drain electrode extends to the entire depth of the side surface of the channel groove and across the entire thickness of the side surface of the dielectric layer; the upper part of the gate electrode is made with a cross-section size in length greater than the cross-section size in length of the lower part by 0.3 to 0.6 mcm, wherein the exceeding part is located directly on the top surface of the dielectric layer; the length of the gate electrode corresponds to the cross-section size in length of the lower part thereof, and is equal, accordingly, to 0.03–0.5 mcm.

EFFECT: increase in the output power, gain coefficient, and breakdown voltage and reduction in the noise level

4 cl, 1 dwg, 1 tbl