HIGH-POWER SHF TRANSISTOR Russian patent published in 1997 - IPC

FIELD: SHF transistors. SUBSTANCE: transistor has one or several transistor structures, leads of electrodes of each structure are connected to input and output electrodes of transistor correspondingly through input and output matching LC circuits. Input and output matching LC circuits are made in the form of three stages of connected links. Two outer ones are links of low-pass filters type, while inner ones connected to transistor structures of input and output matching circuits are made in the form of links of low-pass filters type, or inductance placed in parallel and/or in parallel to circuit composed of inductance with by-pass capacitor. Each link of each of matching LC circuits is made in the form of L or LC elements with provision of their in-phase operation with corresponding elements of proper links of other matching LC circuits. Elements of links of each matching LC circuit have parameters satisfying conditions of full matching with specified external signal source and load on central frequencies of two working ranges of frequencies and conditions of achievement of relation between bandwidth in each working range of frequencies within limits 0,3≅Δf₁/Δf₂≅3, , where Δf₁,Δf₂ are bandwidth of first and second working ranges of frequencies. EFFECT: provision for SHF transistor operation in two separated frequency ranges. 2 cl, 6 dwg