HIGH-POWER BIPOLAR MICROWAVE TRANSISTOR (ALTERNATIVES) Russian patent published in 2007 - IPC H01L29/72 

FIELD: designing and production of high-power microwave transistors.

SUBSTANCE: proposed high-power bipolar microwave transistor incorporating transistor chips disposed on collector electrode has at least one isolating capacitor disposed on collector electrode connected by means of wires with base electrode of transistor chips and at least one matching capacitor in transistor input circuit connected by means of wires to emitter electrode of transistor chips. Isolating capacitor of first transistor design alternate is connected through feedback inductance coil to emitter electrode of transistor chips. Isolating capacitor of second transistor design alternate is connected through feedback inductance coil to matching capacitor of transistor input circuit.

EFFECT: enhanced efficiency of broadband microwave transistor.

2 cl, 2 dwg