POWERFUL HIGH-FREQUENCY AND SUPER HIGH-FREQUENCY TRANSISTOR Russian patent published in 2008 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: invention allows to increase gain factor of power of powerful HF and SHF transistor, transistor cells of which form row that is separated in the middle into two equal parts, and each transistor cell contains separated from other cells metallised platform for connection of transistor cell with inlet electrode by means of wire conductor. For that purpose metallised platforms and wire conductors are installed symmetrically in relation to transistor cells row middle.

EFFECT: provides more accurate matching of circuits resonance frequencies with main working frequency of transistor.

2 dwg