HIGH-POWER MICROWAVE TRANSISTOR Russian patent published in 2004 - IPC

FIELD: designing and producing high-power microwave transistors. SUBSTANCE: proposed transistor has case incorporating internal sectionalized collector electrode that mounts resistors connected in series with its adjacent sections and external collector electrode with collector lead connected thereto. It also has transistor chips, at least one per section of internal collector electrode, matching capacitor with one of its electrodes mounted on metal base between internal and external collector electrodes of transistor; this metal base is connected to common electrode of transistor. Other electrode of capacitor, external collector electrode, and collector lead connected to the latter are coaxially divided into at least to sections with series resistors inserted between adjacent sections of capacitor electrode. EFFECT: enhanced resistance to transverse electromagnetic waves at output voltage rise. 2 cl, 2 dwg