POWERFUL HIGH-FREQUENCY AND SUPER HIGH-FREQUENCY BROADBAND TRANSISTOR Russian patent published in 2010 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: powerful high-frequency and super high frequency broadband transistor contains a row of N transistor cells, their first metallised areas are connected to the housing input electrode with the first conductive tape while their second areas are connected to the housing common electrode with the second conductive tape. Between the spots of the tapes connection to the metallised plates there are cavities arranged. The length and width of at least one conductive track between cavities in at least one conductive tape differ from those of other conductive tracks between cavities while inductivity of the conductive tracks of different length and width between cavities from the contact with the metallised are to the spot of connection to the conductive tape meets a specific condition.

EFFECT: invention enables increase of the transistor operating frequency bandwidth.

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