FIELD: manufacture of semiconductor device and integrated circuits. SUBSTANCE: upon implanting ions in surface layer of semiconductor plates, the latter are treated with pulsed magnetic field followed by heat treatment at 200-300 C for 30-15 minutes. Ions are implanted by irradiating plate surface layer with α-particles on face side of plate. EFFECT: facilitated procedure. 3 cl
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF MANUFACTURE OF MIS LSI CIRCUITS | 1991 |
|
RU2017265C1 |
| PROCESS OF MANUFACTURE OF MIS LARGE-SCALE INTEGRATED CIRCUITS | 1987 |
|
RU1519452C |
| PROCESS OF MANUFACTURE OF SEMICONDUCTOR DETECTOR OF IONIZING PARTICLES | 1992 |
|
RU2035807C1 |
| METHOD OF MAKING IONISING RADIATION SENSOR | 2014 |
|
RU2575939C1 |
| METHOD FOR GENERATION OF METAL-DIELECTRIC- SEMICONDUCTOR TRANSISTORS | 1986 |
|
SU1452398A1 |
| METHOD OF MAKING SHORT-RANGE PARTICLE DETECTOR | 2008 |
|
RU2378738C1 |
| PROCESS OF MANUFACTURE OF MIS LARGE-SCALE INTEGRATED CIRCUITS | 1990 |
|
SU1762688A1 |
| METHOD OF GETTERING OF STRUCTURES OF INTEGRATED MICROCIRCUITS | 1991 |
|
RU2029410C1 |
| SILICON SUBSTRATE TREATMENT PROCESS | 1997 |
|
RU2120682C1 |
| METHOD AND APPARATUS FOR PRESOWING TREATMENT OF SEEDS | 1993 |
|
RU2083070C1 |
