METHOD OF GETTERING OF STRUCTURES OF INTEGRATED MICROCIRCUITS Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: heating of nonworking side of substrate with pulse noncoherent radiation till localities of melt on its surface are formed is conducted at final stage of manufacture of integrated microcircuit before fabrication of metal coat for gettering structure of ICs. Working side of substrate is cooled in this case. With crystallization formation of gettering layer is performed, its efficiency is determined by temperature and rate of heating. Then low-temperature annealing with noncoherent radiation and chemical etching of nonworking side of substrate are conducted. EFFECT: improved gettering efficiency. 1 dwg, 1 tbl