FIELD: microelectronics; digital semiconductor devices and integrated circuits. SUBSTANCE: structures are periodically irradiated on nonworking side with alpha- particle flux from radioisotope radiation source at frequency of mHz range with equal radiation-pause half-cycles, and one of physical parameters responding to crystallographic flaws in structure is measured on working side before and after irradiation and recorded; radiation-pause cycles are repeated until recorded parameter is stabilized; after radiation, structure is held under normal conditions until relaxation processes fully stop. EFFECT: facilitated procedure.
