INTEGRAL ELECTROMAGNETIC TRANSDUCER BUILT AROUND BIPOLAR MAGNETIC TRANSISTOR Russian patent published in 2010 - IPC H01L27/22 

FIELD: electrical engineering.

SUBSTANCE: proposed transducer built around bipolar magnetic transistor on monocrystal silicon substrate consists of two-collector lateral bipolar magnetic transistor and collector load resistors, and base and pocket bias. The ratio between transducer emitter and collector electrode sizes and the distance there between exceeds three. Collectors are connected via resistors with contact pad of power supply pole and with contacts of base area. Bias current is set to flow to the pocket via resistor connected to the same contact pad of one pole of power supply. Contacts and emitter are connected electrically to feed potential from contact pad of the second pole of power supply. Resistors are incorporated with the transducer.

EFFECT: reduced initial voltage difference without magnetic field and smaller measurement errors

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