METHOD OF FORMING INTERCONNECTIONS IN MATRIX OF THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS Russian patent published in 1994 - IPC

Abstract RU 2012090 C1

FIELD: microelectronics. SUBSTANCE: method involves conformal coating of matrix with conducting layer so that full flow passes through smaller gaps between columns. Columns are formed with bulges at bases so that gaps at column bases for second direction are smaller than those for first one; conducting layer is applied in two steps; smaller gaps at base are filled first and then smaller gaps at column tops. EFFECT: facilitated procedure. 5 cl, 8 dwg

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RU 2 012 090 C1

Authors

Shokin A.N.

Rakitin V.V.

Krylov B.G.

Dates

1994-04-30—Published

1991-05-22—Filed