FIELD: growing crystals. SUBSTANCE: device for growing monocrystal from silicon contains tubular-to-conical body shielding growing monocrystal which separates container space above the melt into internal and external parts, the body having at least one hole through which inert gas directed into internal part of container may get directly into its external part. Method of invention is distinguished by that a part of inert gas is directed through at least one hole in the tubular-to-conical body from internal space of container into its external part. EFFECT: improved monocrystal growth conditions. 5 cl, 12 dwg
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