FIELD: crystal growing. SUBSTANCE: polycrystalline silicon is loaded into quartz bowl and cylindrical shield 235-240 mm in diameter is placed coaxially with monocrystals to be grown, lower end of the shield being located over the melt plane at a height h determined from formula h = (A-D)/B, where D is specified diameter of silicon monocrystalline ingot (76-150 mm), A dimension coefficient (210-240), and B parameter (4.6-5.0). Crystallizer is sealed and inert gas is fed at velocity 15 l/min, whereupon melt is seeded to start growth of monocrystal. Yield of semiconductor-quality product is higher than 72%. EFFECT: eliminated crystal defects. 1 dwg, 3 ex
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