FIELD: semiconductor silicon device manufacture.
SUBSTANCE: proposed method for manufacturing semiconductor devices on crystal-oriented (100) silicon wafers involves organization of regions with semiconductor device layout components on one of silicon wafer sides and wafer division into chips, as well as wafer thinning by chemical etching in etchant selective for crystal orientation (100); in the course of manufacture shielding mask is formed prior to etching on underside of wafer to shield peripheral regions of wafer so that internal configuration of mask area periphery coincides with outer one of structures on face side of wafer.
EFFECT: enhanced yield.
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