PROCESS OF PRODUCTION OF CONTINUOUS FILM WITH DIAMOND-LIKE STRUCTURE AND GEAR FOR ITS IMPLEMENTATION Russian patent published in 1998 - IPC

FIELD: production of films. SUBSTANCE: process of production of continuous thin film with diamond-like structure includes deposition of film on substrate from plasma of SHF discharge in atmosphere of working gas or mixture of gases. Negative electric displacement is supplied to substrate. Substrate is positioned outside zone of discharge under pressure 0.01-10.0 Pa with density of power flux in zone 0.2-5.0 Wt/sq.cm. Carbon-carrying gas or substances containing nitride-forming elements or substances including carbide-forming elements are used in the capacity of working gas or one of components of mixture. Gear for implementation of process has source 1 of SHF energy coupled through cylindrical waveguide 4 and dielectric window 3 to technological chamber 2. Chamber houses substrate holder 7 electrically insulated from chamber. Two solenoids 9, 10 are placed uniaxially with waveguide. First solenoid 9 is located in plane of dielectric window 3, second solenoid 10 is positioned between first solenoid 9 and substrate holder 7. Diaphragm 11 of ferromagnetic material is situated between second solenoid 10 and substrate holder 7. Distance between diaphragm 11 and second solenoid 10 does not exceed internal diameter of second solenoid 10. Diameter of diaphragm satisfies condition D_odw≤ d_1g≤ (D_2ids+ D_2ods)/2, where D_odw is outer diameter of waveguide, cm; d_1g- is diameter of hole in diaphragm, cm; D_2ids and D_2ods- are correspondingly inner and outer diameters of second solenoid, cm. Holder 7 is placed from second solenoid 10 at distance not exceeding one characteristic linear dimension of substrate. Gear may be supplemented with third solenoid 12 and second diaphragm 13. Third solenoid 12 is positioned at distance L ≤ D_3ids+ d_1g from first diaphragm in direction of substrate holder, where D_3ids is inner diameter of third solenoid, cm; d_1g is diameter of hole of first diaphragm. Second diaphragm is located between diaphragm 11 and third solenoid 13 at some distance from third solenoid that does not exceed its inner diameter. EFFECT: increased productivity and improved quality of films. 4 cl, 7 dwg, 1 tbl