SEMICONDUCTOR OPTICAL AMPLIFIER Russian patent published in 1998 - IPC

FIELD: quantum electronics, high- power single-mode and/or single-frequency high-coherent radiation sources used in systems of transmission of energy and information over long distances, design of medical equipment, laser technological equipment. SUBSTANCE: in semiconductor optical amplifier lead-out is distributed over surface of amplification region in specified order and each lead-out means is made in the form of recess of definite depth with reflectors on its faces and region transparent for brought-out radiation that provide both for withdrawal of portion of amplified radiation and for passage of its other portion for further amplification in next amplification region ( cell ) pumped with injection current. This leads to increase of effective amplification length for output signal of semiconductor operational amplifier and as outcome of this power of output radiation is considerably raised, pattern of its radiation is narrowed and multiplicity of output amplified signals from single optical radiation across input of semiconductor optical amplifier is provided. EFFECT: increased functional characteristics of amplifier. 13 cl, 7 dwg