INJECTION LASER Russian patent published in 1999 - IPC

FIELD: quantum electronic technology, high-bright and high- power semiconductor injection radiation sources with narrow directional pattern. SUBSTANCE: proposed injection laser can be used in systems transmitting energy and information over long distances, n fiber-optical communication and information transmission systems, in design of medical equipment, technological laser equipment, lasers with doubled frequency of generated radiation and for pumping of solid-state and fiber lasers. It is suggested that region of extraction of radiation with refractive index n_ez and thickness d_ez should be made at east on one side of last layer of laser heterostructure in proposed injection laser. In this case aggregation composed of laser heterostructure and added region of extraction of radiation having effective refractive index n_eff are characterized by certain relations of refractive indices n_eff and n_ez, length L_oz of optical resonator and thickness d_ez. These relations include n_effmin-minimal value of n_eff out of all possible n_eff for collection of laser heterostructures with regions of extraction of radiation presenting practical usefulness, n_min-least of refractive indices of n_Ii layers bordering on one side on active layer and of n_IIj layers bordering on active layer on opposite side. EFFECT: increased output power and brightness of output radiation, its efficiency, prolonged service life and reliability of laser. 125 cl, 16 dwg