METHOD OF MANUFACTURING CMOS STRUCTURES Russian patent published in 2018 - IPC H01L21/8238 

FIELD: physics.

SUBSTANCE: adjusting the basic operations, it is possible to improve the parameters of the CMOS structures and the characteristics of the integrated circuits produced at earlier production stages, which increases the operating parameters of MOS transistors and reliability, improves the characteristics of integrated circuits and expands their functionality. In the basic CMOS technology of a single technological cycle for manufacturing elements of the control circuit of low-power and high-power transistors, the "pocket in pocket" manufacturing technology is introduced to create p-MOS-transistors with an isolated pocket of n-type and a vertical N-MOSFET technology, where the starting material is an epitaxial structure. The following operations are used: first oxidation, plasma-chemical etching of SiO₂, "I" photolithography, etching of SiO₂, ion doping "r-pocket", redistribution "r-pocket", "II" photolithography, etching of SiO₂, ion doping "n-pocket", redistribution "n-pocket", "III" photolithography, etching of SiO₂, thermal oxidation, ionic alloying "Suballoying", "IV" photolithography, etching of SiO₂, fine oxidation, deposition of polysilicon Si^*, "V" photolithography, etching of Si^*, "VI" photolithography, ionic doping "Area n⁺⁺"," VII "photolithography, ionic doping "Area r⁺⁺", annealing, formation of SiO₂ (unalloyed), precipitation of borophosphorosilicate glass, annealing, "VIII" photolithography, etching of boron phosphosilicate glass, deposition of metal, "IX" photolithography, metal etching, precipitation of SiO₂, "X" photolithography, etching of SiO₂.

EFFECT: formation of a single technological cycle for manufacturing the elements of a control circuit for a low-power and high-power transistor in order to obtain an intelligent power key of any complexity on a single chip.

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