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2 181 796

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Application

99125876/12, 1999-12-03

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Start date

1999-12-03

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Actual filing date

1999-12-03

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Published

2002-04-27

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Inventor

Dorogovin B.A.Khadzhi V.E.Evseeva I.B.Romanov L.N.Sopeleva E.G.Shvanskij P.P.

(73)

Holder

Vserossijskij Nauchno-Issledovatel'Skij Institut Sinteza Mineral'Nogo Syr'Ja

METHOD OF GROWING CRYSTAL QUARTZ Russian patent published in 2002 - IPC

Abstract RU 2181796 C2

FIELD: synthesis of quartz monocrystals used in electronic industry for manufacture of thermostable elements with piezo-quarts large-sized substrates in form of squares or AT-cut disks. SUBSTANCE: growing-crystal quarts is effected under hydrothermal conditions from sodium-containing solution for seed of parallel planes of main negative rhombohedron "r" sizes of projections of seed along axis Y on r-plane Y′ exceed sizes of seed along axis X; growth of crystal is effected in both sides from edges of seed along positive and negative directions of axis X by faces of acutest rhombohedrons and negative trigonal trapezium hedrons; seeds of rrY′-orientation are preliminarily grown. EFFECT: possibility of obtaining AT-cut blanks at diameter of 3 to 5 inch without fragments of seed. 5 dwg, 1 ex

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RU 2 181 796 C2

Authors

Dorogovin B.A.

Khadzhi V.E.

Evseeva I.B.

Romanov L.N.

Sopeleva E.G.

Shvanskij P.P.

Dates

2002-04-27—Published

1999-12-03—Filed

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