QUARTZ MONOCRYSTAL GROWING METHOD Russian patent published in 2002 - IPC

Abstract RU 2180368 C1

FIELD: processes for manufacturing synthetic monocrystals of quartz and hydrothermal solutions by temperature drop process, possibly for making high quality optical quartz for optical-mechanical and radioelectronic industry branches. SUBSTANCE: method comprises steps of growing quartz monocrystals by hydrothermal process from alkaline solutions by recrystallization of quartz charge from charge container onto horizontally arranged screened seed tips at temperature drop between growing chamber and solution chamber; using multisection charge container with partitions perforated along height, each partition being bottom of next section; realizing crystal growing at screening upper and end surfaces of seed tip with gasket of steel foil between screen and seed tip; at beginning of growing cycle reducing pressure of solution by 25-40MPa at constant synthesis temperature; after termination of growing process cooling autoclave at rate (8-10)C/hour until 270C and pressure 10MPa; then finally reducing pressure of solution at the same rate of cooling until 120C; after achieving such temperature deenergizing electric heaters of autoclave. EFFECT: possibility for making high-quality optical quartz. 1 tbl

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RU 2 180 368 C1

Authors

Dorogovin B.A.

Khadzhi V.E.

Gordienko L.A.

Shvanskij P.P.

Belimenko F.A.

Dates

2002-03-10Published

2001-04-23Filed