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2 198 250

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IPC

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Application

2001116616/12, 2001-06-20

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Start date

2001-06-20

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Actual filing date

2001-06-20

(45)

Published

2003-02-10

(72)

Inventor

Kortunova E.V.Shvanskij P.P.Dorogovin B.A.Nikolaeva N.G.Ljutin V.I.Khadzhi V.E.

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Nauchno-Issledovatel'Skij Institut Sinteza Mineral'Nogo Syr'Ja"

METHOD OF ZINCITE CRYSTAL GROWING Russian patent published in 2003 - IPC

Abstract RU 2198250 C1

FIELD: production of synthetic crystals, particularly, methods of production of zincite crystals serving as good piezoelectrics possessing high coefficient of electromechanical coupling; applicable in piezoengineering, acoustooptoelectronics and other fields of science and engineering. SUBSTANCE: method includes growing of zincite crystals in hydrothermal conditions from KOH solution with addition of Li⁺ ions onto oriented parallel to monohedral faces (0001) seeding wafers cutout of preliminarily grown hydrothermal crystals of zincite in airtight vessels from corrosion-resistant material. Seeding wafers are cut out of zincite crystals grown preliminarily on seeds whose surface is oriented parallel to faces of hexagonal prism, and process is conducted in linings from titanium alloy or nickel with wall thickness of 10-20 mm or in autoclave of the same material. EFFECT: produced high-quality zincite crystals for technical usage with simplified and low-cost process of their growing. 1 ex

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RU 2 198 250 C1

Authors

Kortunova E.V.

Shvanskij P.P.

Dorogovin B.A.

Nikolaeva N.G.

Ljutin V.I.

Khadzhi V.E.

Dates

2003-02-10—Published

2001-06-20—Filed