METHOD FOR MANUFACTURING SINGLE-CRYSTALLINE SILICON PADS ON CRYSTAL SUBSTRATE Russian patent published in 1998 - IPC

FIELD: microelectronics; high-resolution active matrix displays; thin-film single-crystalline silicon transistors. SUBSTANCE: method involves evaporation of etch-retarding layer 30 on single-crystalline silicon substrate 18, deposition of single-crystalline silicon layer 32 on layer 30, attachment of crystal substrate 20 to single-crystalline silicon layer 32 at room temperature, fixation and sealing of edges of substrate 18, layer 30, layer 32, and substrate 20 with adhesive, joint polishing of part of substrate 18 and part of adhesive 22, etching of remaining part of substrate 18, removal of remaining portion of adhesive 22, etching of layer 30, deposition of photoresist mask on layer 32 to determine location of pads on the latter, etching of single-crystalline silicon pads, and their diffused binding to crystal substrate 20. EFFECT: improved reliability of low-temperature adhesive joint and, consequently, improved characteristics of deices. 18 cl, 11 dwg