PROTECTION OF TRANSDUCERS ON ION-SELECTIVE FIELD-EFFECT TRANSISTORS AGAINST ELECTROSTATIC DISCHARGE Russian patent published in 1999 - IPC

FIELD: microelectronics. SUBSTANCE: invention refers to manufacture of microcircuits ensuring protection of device for selective measurement of ions in liquids against electrostatic discharges. There are presented process, device and technology of manufacture of microcircuits for protection against electrostatic discharge for device 250 based on ion-selective field-effect transistor used for selective measurement of ions in liquid 299. In correspondence with one aspect of invention circuit for protection against electrostatic discharge made from typical protective elements 201, 202, 206 is placed on same silicon crystal on which ion-selective field-effect transistor 250 is formed together with interface 203 that is in contact with measured liquid 299 and does not open paths for D.C. leaks between ion-selective field-effect transistor 250 and liquid 299. In agreement with preferable version of implementation of invention structure of capacitor is used as interface between protective circuit 201, 202, 206 and sample of liquid 299. Next aspects of invention are directed to methods meant in essence to protect ion-selective field-effect transistors using above-mentioned interface 203, for instance, structure of capacitor against electrostatic discharge and processes intended for manufacture of new interface on silicon plate. EFFECT: provision for protection against electrostatic discharge with simultaneous avoidance of difficulties in development of metal electrode designed for reliable low-impedance contact with liquid. 19 cl, 4 dwg