FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics, namely to the technology of manufacturing semiconductor structures that are the element base of functional microelectronics, and can be used in the technology of manufacturing of integral sensing elements of gas sensors with dielectric membranes. Aim of invention is to increase the yield of suitable crystals and increase the profitability of the product by increasing the mechanical strength of the structure as a whole due to release of membrane by one operation of etching the substrate at the end of the technological route and by reducing the mechanical stresses in the membrane due to the use of alternating layers.
EFFECT: increase the yield of suitable crystals and increase profitability of the product.
1 cl, 7 dwg
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