METHOD FOR MANUFACTURING MULTIPURPOSE GAS COMPOSITION SENSORS Russian patent published in 2012 - IPC H01L21/306 

FIELD: electricity.

SUBSTANCE: in the method for manufacturing multipurpose gas composition sensors including application of dielectric film on the face side of silicon substrate, formation of sensor structure elements on the film and creation of thin-film dielectric membrane using method of silicon substrate anisotropic etching form rear side, anisotropic etching is carried out in two steps, where the first step is executed before application of dielectric film, and the second step - after completing all operations of sensor structure elements formation with preliminary protection of face side of substrate against etchant Anisotropic etching simultaneously forms dividing strips between crystals. Dividing strips have depth of 30 to 40% of substrate thickness.

EFFECT: possibility to obtain thin-film dielectric membranes throughout substrate area simultaneously and increase in yield of sensors in the whole process of their manufacturing.

2 cl, 3 dwg