METHOD OF MAKING SENSITIVE ELEMENTS OF GAS CONCENTRATION SENSORS Russian patent published in 2016 - IPC H01L21/306 G01N27/12 

Abstract RU 2597657 C1

FIELD: measuring equipment; instrumentation.

SUBSTANCE: invention relates to production of means of identifying impurities of gases and determining concentration of gases in air. Method of making sensitive elements of sensors of gas concentration according to invention involves application of dielectric film on face side of silicon substrate, forming a film structure of sensitive elements and creation of thin dielectric membranes by anisotropic etching of silicon substrate on back side, conducted in two steps, first before application of dielectric film, and second after all operations for creating structure of sensitive elements with preliminary protection against etchant front side of substrate, wherein first step of etching is carried out in aqueous solution of a mixture of ethylene diamine with pyrocatechol, and then in aqueous solution of potassium hydroxide, and second step is performed only in aqueous solution of a mixture of ethylene diamine with pyrocatechol.

EFFECT: invention enables to obtain thin (1-5 mcm) dielectric membranes throughout substrate area simultaneously and higher yield of sensitive elements in production process thereof.

1 cl, 4 dwg

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RU 2 597 657 C1

Authors

Veselov Denis Sergeevich

Voronov Yurij Aleksandrovich

Dates

2016-09-20Published

2015-04-14Filed