INTEGRATED CIRCUIT WITH NANO-CONDUCTOR SENSORS, MEASURING DEVICE, METHOD OF MEASUREMENT AND METHOD OF MANUFACTURE Russian patent published in 2017 - IPC G01N27/414 G01N27/12 B82Y15/00 

FIELD: electricity.

SUBSTANCE: integrated circuit (100) is described, comprising a substrate (110); an insulating layer (120) on the said substrate; and the first nano-conductor element (140a) and the second nano-conductor element (140b) adjacent to the said first nano-conductor element on the said insulating layer; wherein the first nano-conductor element is disposed so as to be exposed to a medium containing the analyte of interest, and wherein the second nano-conductor element is protected from the said medium by a protective layer (150) on the said second nano-conductor element. The integrated circuit according to the invention comprises the substrate, the insulating layer on the said substrate, the first nano-conductor element and the second nano-conductor element on the said insulating layer, wherein the first nano-conductor element is a source node of the first transistor and the second semiconductor element is a source node of the second transistor, the said first and the said second transistor have a common drainage node, wherein the first nano-conductor element is disposed so as to be exposed to the medium containing the analyte, and wherein the second nano-conductor element is disposed so as to be protected from the of said medium by the protective layer on the said second nano-conductor element. A measuring device including such IC, a method of measurement using such IC, and a method of manufacture of such IC are also provided.

EFFECT: simplify the sensor configuration and improve measurement reliability.

14 cl, 6 dwg