FIELD: electronic engineering.
SUBSTANCE: device provided with short channel for controlling electric current has semiconductor substrate to form channel. Doping level of channel changes extensively in vertical direction and keeps to constant values at longitudinal direction. Electrodes of gate, source and discharge channels are made onto semiconductor substrate in such a manner that length is equal or less than 100 nm. At least one of source and discharge electrodes form contact in shape of Schottky barrier. Method of producing MOS-transistor is described. Proposed device shows higher characteristics at lower cost. Reduction in parasitic bipolar influences results to lower chance of "latching" as well as to improved radiation resistance.
EFFECT: improved working parameters.
24 cl, 11 dwg
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