INTEGRATED THERMAL CELL Russian patent published in 1999 - IPC

FIELD: heaters for electronic devices. SUBSTANCE: thermal cell used for heating semiconductor integrated-circuit gas lasers, infrared sources of adsorption-type optical gas analyzers, activators of ink-jet printer heads has thin layer of single-crystalline silicon applied to thin-film multilayer insulating diaphragm; naked surface of silicon layer is covered with multilayer insulating film whose layers are identical to those of diaphragm and are arranged in mirror-like manner and symmetrically relative to silicon layer; film is, essentially, combination of SiO₂ and Si₃N₄ insulating layers their thickness ratio being 3.5 -2.7:1.0; SiO₂ layer is applied to silicon layer. EFFECT: improved reliability and service life of thermal cell. 2 dwg