SOURCE OF ELECTRONS AND METHOD OF ITS MANUFACTURE Russian patent published in 1997 - IPC

FIELD: electronics, information display systems based on autoemitting devices. SUBSTANCE: source of electrons comprises insulating backing with first conductive film formed on it and forming the pulling electrode drawing electrons from autoemitting cathode and having area of surface from which secondary electron emission is conducted, dielectric layer of cathode holder with holes above first conductive film having part expanding over outline of area of hole adjacent to first conductive film, second conductive film part of which is arranged on walls of hole excluding walls of expanding part, another part positioned on first conductive film in hole to form region of secondary electron emission, part protruding into expanding part of hole directed to edge of part of conductive film located on bottom of hole and having vacuum gap with films on bottom of hole. Butt of protruding part forms autoemitting electrode. For manufacturing the source of electrons on backing with elements of first conductive film there are formed isles of additional coat of two layers above elements of first conductive layer and dielectric layer is deposited. In agreement with another version for manufacturing source of electrons isles of additional coat made of two layers are formed above elements of first conductive film located on insulated backing, dielectric layer is deposited and holes up to lower layer of additional coat are formed. Additional coat is etched, second conductive layer is formed by method of vacuum sputtering with formation of its break over outline of holes in shadow of directed flow of particles. Then upper layer of isle of additional coat is etched and interconnections are formed. EFFECT: higher efficiency. 5 cl, 11 dwg