METHOD FOR PRODUCING SILICON NANOSTRUCTURE, LATTICE OF SILICON QUANTUM CONDUCTING TUNNELS, AND DEVICES BUILT AROUND THEM Russian patent published in 2001 - IPC

FIELD: optoelectronic and nanoelectronic devices. SUBSTANCE: evaporation of silicon surface is effected by bombarding it with uniform flow of ions of nitrogen molecules in superhigh vacuum to form periodic wavy pattern. Ion energy, angle of incidence on surface of mentioned material, silicon layer temperature, and depth of ion penetration in wavy pattern are determined proceeding from chosen wavelength of wavy pattern ranging between 9 and 120 nm. Silicon nitride mask with drooping edges is used to determine section of silicon surface to form lattice of conducting tunnels. Prior to evaporation silicon surface inside mask opening is cleaned of dirt. In order to produce lattice of silicon quantum conducting tunnels thickness of nanostructure silicon layer is chosen to be greater than sum of mentioned depth of ion penetration in pattern, mentioned height, and mentioned ion penetration range; silicon wire production process is controlled by threshold value of secondary ion emission signal coming from nanostructure insulator. Nanostructure may be used in optoelectronic and nanoelectronic devices such as field-effect transistors. EFFECT: enlarged functional capabilities. 12 cl, 3 dwg