SEMICONDUCTOR RADIATION SOURCE Russian patent published in 2012 - IPC H01L33/08 H01L33/36 

FIELD: physics.

SUBSTANCE: in a semiconductor radiation source, having a housing, an optically transparent cover parallel to the bottom of the housing, a rectangular dielectric plate on whose top side there is a rectangular array of semiconductor emitting diodes, and the plate itself is placed at the bottom of the housing, and a liquid which fills the free space inside the housing, each row of the array has the same number of series-connected diodes, the number of which is meant to be powered by a power supply having a standard voltage value. The disclosed semiconductor radiation source does not require the designing of power supplies with non-standard voltage values. The disclosed semiconductor radiation source - standard power supply system is more efficient than a prototype device - non-standard power supply system. The disclosed semiconductor radiation source can operate on direct and pulsed current and on alternating current at different frequencies and different types of modulation.

EFFECT: broader functionalities.

4 cl, 6 dwg