SEMICONDUCTOR LIGHT-EMITTING DIODE Russian patent published in 2003 - IPC

FIELD: optoelectronics; semiconductor infrared diodes emitting in visible range of wavelengths. SUBSTANCE: semiconductor structure of infrared- emitting diode built up of separate mesa structures is disposed on metallized insulating wafer made of material having high coefficient of heat conductivity. Antireflective layers are formed on outer side surfaces of mesa structures. Wafer carrying mesa structures is disposed on flat bottom of reflecting package. Inner space of the latter is filled with optically transparent heat-conducting material. When liquid is used as transparent heat-conducting material, reflecting package is closed with optically transparent cover passing light beams. EFFECT: enhanced power emitted by diode. 15 cl, 3 dwg