HIGH-POWER HYBRID INTEGRATED CIRCUIT Russian patent published in 2000 - IPC

FIELD: microelectronics. SUBSTANCE: high-power hybrid integrated circuit has dielectric plate metallized on both sides with topological pattern of metallization on face side and at least one assembly land located in recess in face side of plate on heat sink. Crystal of caseless package of electronic instrument is positioned and anchored on assembly land so that face of crystal lies in same plane with topological pattern of metallization. Heat sink presents system of blind holes made in bottom of recess and filled with heat conducting material. Residual thickness of bottom of blind holes is equal to 1-999 μ. Spaces between crystal and side walls of recess are filled with partially heat conducting binding material. Reverse side of base is linked to heat conducting base. EFFECT: improved removal of heat from crystal. 5 cl, 6 dwg