HIGH-POWER HYBRID INTEGRATED CIRCUIT OF SHF RANGE Russian patent published in 2000 - IPC

FIELD: microelectronics. SUBSTANCE: depth of recesses in metal base of high- power hybrid integrated circuit is so chosen that face of crystals and metal base are located in one plane. Dielectric plate has screen grounding metallization on reverse side in points bordering on metal base. Metal base is tightly and electrically connected to screen grounding metallization of plate and joining holes in plate are filled with current-conducting material. Distance from side surfaces of crystals to side surfaces of recesses in base amounts to 0.001-0.2 mm. EFFECT: improved electrical and heat dissipation characteristics of circuit. 2 cl, 2 dwg