HIGH-POWER HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 1999 - IPC

FIELD: semiconductor microelectronics and electronic engineering. SUBSTANCE: integrated circuit has semiconductor chip devices 5 with contact pads, insulating board 1 with holes 3 and layout pattern on its face side as well as screen metal spray 2 on its opposite side, metal base 4 with projections 6 abutting against screen metal spray 2 of insulating board 1 and passed through its holes 3; semiconductor chip devices 5 are mounted on projections 6 of base 4 so that their surface carrying contact pads is level with face side of insulating board 1; part of contact pads is connected with layout pattern metal spray and other part, with projections 6 of base 4; metal base 4 has holes 3 arranged at location points of its projections 6; the latter are, essentially, inserts rigidly fixed in mentioned holes 3 and made of material whose coefficient of heat conductance is higher than that of metal base 4. EFFECT: enlarged functional capabilities, improved operating reliability in comprehensive temperature range, and reduced size of circuits. 4 cl, 2 dwg