RIBBON-BEAM ION PLASMA SOURCE (DESIGN VERSIONS) Russian patent published in 2000 - IPC

FIELD: plasma engineering. SUBSTANCE: plasma source used for generating ribbon-beam ions for various processes including coating and ion implantation processes has ionization chamber with rectangular emitting aperture, working medium supply unit, high-frequency energy input unit, and electrostatic ion extraction system. Magnetic system of ion source functions to build up magnetic field inside ionization chamber whose flux density reduces from chamber walls towards its longitudinal symmetry axis and towards emitting aperture. Ion source of first design version has its high-frequency energy input unit built up of two sections arranged on opposite sides of ionization chamber. Each section is formed by long current conductors placed in parallel on side insulating walls of chamber along emission aperture. Ion source of second design version has its high-frequency energy input unit built up of at least two sections each one being formed by current conductors placed in parallel on side walls of chamber and crosswise of longitudinal symmetry axis of emission aperture. Conductor leads are series-connected in each section through make contact members to form series power circuit. Ion source provides for producing long ribbon beam of ions of inert and chemically active substances with high degree of uniformity of current density through beam sectional area. EFFECT: improved reliability, service life, and power efficiency; reduced gas requirement. 14 cl, 5 dwg