FIELD: technological processes.
SUBSTANCE: invention is related to technology for modification of surface properties of materials and to equipment intended for realisation of technological finishing process, and may be used in various production processes, for which high hydrophilic property and high adhesion capacity of finished surface are required. Invention objective is to increase speed and efficiency of finished material surface properties modification process by reduction of contact angle value in finished surface and to increase force of surface adhesion after radiation of sample with bundle of ions till specified dose of radiation. For this purpose in method of material surface properties modification prior to feed along finished surface of sample, they carry out dissociation of gas flow or mixture of chemically active gases to achieve extent of dissociation of at least 5%. In installation for modification of material surface properties, system of chemically active gas or chemically actives gases mixture flow supply along finished surface comprises device that provides for dissociation of chemically active gas or mixture of chemically active gases to obtain extent of dissociation of at least 5%.
EFFECT: application of invention increases efficiency of material surface properties modification, considerably improves hydrophilic and adhesive properties of finished product surfaces.
14 cl, 1 tbl, 10 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR PLASMA DEPOSITION OF POLYMER COATS AND INSTALLATION FOR ITS REALISATION | 2008 |
|
RU2382119C1 |
PLASMA ION SOURCE | 2008 |
|
RU2371803C1 |
METHOD FOR PLASMA DEPOSITION OF POLYMERIC COATINGS AND METHOD FOR PLASMA GENERATION | 2001 |
|
RU2190484C1 |
METHOD AND DEVICE FOR PLASMA TREATMENT OF MATERIAL AND PLASMA GENERATION PROCESS | 2001 |
|
RU2196394C1 |
PLASMA REACTOR AND PLASMA GENERATING DEVICE (ALTERNATIVES) | 2001 |
|
RU2196395C1 |
RIBBON-BEAM ION PLASMA SOURCE (DESIGN VERSIONS) | 1999 |
|
RU2151438C1 |
HIGH-FREQUENCY PLASMA SOURCE | 2022 |
|
RU2789534C1 |
PLASMA ION SOURCE AND ITS OPERATING PROCESS | 2000 |
|
RU2167466C1 |
GASEOUS-DISCHARGE DEVICE | 1996 |
|
RU2121729C1 |
ION SOURCE | 2020 |
|
RU2749668C1 |
Authors
Dates
2009-10-27—Published
2008-09-03—Filed