PLASMA ION SOURCE AND ITS OPERATING PROCESS Russian patent published in 2001 - IPC

FIELD: plasma engineering; plasma sources for generation of intensive ion beams. SUBSTANCE: plasma ion source producing ion beams that can be used in various processes such as coating, ion assistance, ion implanting, or in changing material properties has cathode chamber with gas inlet. Hollow anode forming anode chamber communicates with cathode chamber through outlet opening provided in wall of the latter. Ion source incorporates electric ion-extraction system with emissive electrode mounted in outlet opening of anode chamber. Magnetic system functions to build up magnetic field in cathode and anode chambers with primarily axially directed vector of its flux density. Cathode chamber accommodates firing electrode electrically connected with hollow anode. Outlet hole of cathode chamber receives additional electrode electrically isolated from hollow anode and from cathode chamber. Additional electrode has axial hole whose diameter d is not over 0.1D, where D is maximal inner cross-sectional area of hollow anode. EFFECT: enhanced power efficiency and gas saving ability of device, improved uniformity of ion current density. 26 cl, 3 dwg