FIELD: measurement of magnetic field. SUBSTANCE: method can be used in thin-film multilayer magnetoresistive pickups and reading heads. Before measurement magnetosensitive elements of magnetoresistive pickup are exposed to effect of auxiliary pulse magnetic field. Magnetic field has same value in all magnetosensitive elements of magnetoresistive pickup and exceeds preset maximum value of measured magnetic field. Auxiliary pulse magnetic field is directed transverse to axis of light magnetization of multilayer magnetoresistive pickup. EFFECT: reduced effect of hysteresis on results of measurement of magnetic field by multilayer magnetoresistive pickup. 3 dwg
Title | Year | Author | Number |
---|---|---|---|
MAGNETORESISTIVE TRANSDUCER | 2000 |
|
RU2175797C1 |
GATE WITH MEMORY | 1995 |
|
RU2093905C1 |
HIGH-FREQUENCY MAGNETOSENSITIVE NANOELEMENT | 2010 |
|
RU2433422C1 |
MAGNETIC NEURON | 2001 |
|
RU2199780C1 |
HIGH-FREQUENCY MAGNETOSENSITIVE NANOELEMENT | 2009 |
|
RU2391747C1 |
THIN-FILM MAGNETIC INVERTER | 1999 |
|
RU2168774C1 |
MAGNETORESISTIVE TRANSDUCER | 2003 |
|
RU2236066C1 |
MAGNETIC INVERTER | 1996 |
|
RU2120142C1 |
MAGNETORESISTIVE GRADIOMETER HEAD | 2008 |
|
RU2366038C1 |
MAGNETORESISTIVE SENSOR | 2010 |
|
RU2436200C1 |
Authors
Dates
2000-06-27—Published
1998-10-26—Filed