FIELD: dynamic random-access memory devices. SUBSTANCE: memory device has first and second transistors formed on first layer; first storage electrode connected to first transistor and made under first layer; and second storage electrode connected to second transistor and made under first layer. First and second storage electrodes are connected to each source through spacer formed on side walls of each source; some spots between storage electrodes and transistors are etched. Proposed design ensures twice as large and still larger memory capacity. EFFECT: enlarged memory capacity, enhanced stability of transistor characteristics, reduced channel contraction effect. 16 cl, 10 dwg
