GROWING EPITAXIAL 3C-SIC ON MONOCRYSTALLINE SILICON Russian patent published in 2022 - IPC C30B25/02 C30B25/08 C30B25/10 C30B25/16 C30B25/18 C30B29/36 C01B32/956 C23C16/32 C23C16/52 H01L21/205 

FIELD: chemical or physical processes.

SUBSTANCE: invention relates to technology of growing epitaxial 3C-SiC on oriented monocrystalline silicon. Method comprises providing monocrystalline silicon substrate 2 having a diameter of at least 100 mm, in chemical vapor deposition reactor 7 with cold walls, containing quartz chamber; substrate heating to temperature equal to or greater than 700 °C and equal to or less than 1200 °C, using external heaters 9, which are infrared lamps; introduction of gas mixture 33 into reactor, while substrate is at given temperature, wherein gas mixture contains precursor 16 of silicon source, precursor 18 of carbon source, which differs from precursor 16 of silicon source, and carrier gas 20, so as to precipitate epitaxial layer 3C-SiC on monocrystalline silicon, wherein precursor 16 of silicon source contains silane or chlorine-containing silane, and precursor 18 of carbon source contains containing methyl silane. Method is carried out in a system of chemical deposition from gas phase. Also disclosed is a heterostructure comprising a substrate having a monocrystalline silicon surface, having diameter of at least 100 mm; and epitaxial 3C-SiC layer disposed on the monocrystalline silicon surface having a thickness of at least 10 nm; wherein substantially there is no curvature of the substrate and the surface of epitaxial 3C-SiC has RMS surface roughness, measured by means of atomic force microscope (AFM), equal to or less than 10 nm.

EFFECT: invention provides crystallinity and quality of 3C-SiC epitaxial layer grown at low temperature.

21 cl, 7 dwg